Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 107, Issue 4, Pages 971-975Publisher
SPRINGER
DOI: 10.1007/s00339-012-6850-5
Keywords
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Funding
- Army Research Office (ARO) [W911NF-08-1-0432]
- National Science Foundation [ECCS-0900978]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0900978] Funding Source: National Science Foundation
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An electrically pumped random laser diode was fabricated with a MgZnO/ZnO/MgZnO double heterostructure embedded in a ZnO pn junction. Gain can be achieved at very low-threshold current owing to exciton processes. Light closed loops are formed by random multiple scattering on vertical column boundaries in the thin film. The tilted and rough mesa edge planes serve as refraction mirrors, giving rise to surface emission.
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