Large S-section-ring-cavity diode lasers: Directional switching, electrical diagnostics, and mode beating spectra

Semiconductor lasers with monolithically integrated ring cavities exceeding 1 cm in perimeter were fabricated and characterized optically and electrically. Directional switching was observed, influenced by S-section seeding of unidirectional operation. The lasing threshold was identified by differential current-voltage measurements, which are also shown to be useful in monitoring directional switching. Mode beating was observed at three radio-frequency bands: 7.6, 15.2, and 22.9 GHz.