Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 17, Issue 2, Pages 282-284Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2004.840060
Keywords
directional switching; mode beating spectra; ring diode laser; unidirectional operation
Ask authors/readers for more resources
Semiconductor lasers with monolithically integrated ring cavities exceeding 1 cm in perimeter were fabricated and characterized optically and electrically. Directional switching was observed, influenced by S-section seeding of unidirectional operation. The lasing threshold was identified by differential current-voltage measurements, which are also shown to be useful in monitoring directional switching. Mode beating was observed at three radio-frequency bands: 7.6, 15.2, and 22.9 GHz.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available