Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 104, Issue 4, Pages 1189-1194Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-011-6408-y
Keywords
-
Funding
- Ministry of Education, Science, and Technology [2009-0093703]
- 'Center for Nanostructured Materials Technology' under Ministry of Education, Science and Technology, Korea [2010K000339]
- National Research Council of Science & Technology (NST), Republic of Korea [KIER-B12402] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [핵06A2808] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Electrical transport properties on polycrystalline Cu(In,Ga)Se-2 (CIGS) (Ga/(In+Ga) a parts per thousand 35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available