Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 105, Issue 2, Pages 369-377Publisher
SPRINGER
DOI: 10.1007/s00339-011-6508-8
Keywords
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Funding
- National Natural Science Foundation of China [50835005]
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Inductively coupled plasma (ICP) etching of GaN is systemically investigated by changing ICP power/RF bias power, operating pressure, and Cl(2)/BCl(3) gas mixing ratio. The hexagonal etch pits related to screw dislocation existing along GaN epitaxial layer were observed on the etched GaN surface after ICP etching. The intensity of band-edge emission is significantly reduced from the etched n-GaN surface, which reveals that plasma-induced damage are generated after ICP etching. The oblique sidewall is transferred into GaN using a combination of Cl(2)/BCl(3) plasma chemistry and hard mask SiO(2). By adjusting ICP etching process parameters, oblique sidewalls with various oblique angles can be formed, allowing for conformal metal lines coverage across the mesa structures, which can play an important role in the interconnection of multiple microchips for light emitting diodes (LEDs) fabrication.
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