Journal
SURFACE SCIENCE
Volume 576, Issue 1-3, Pages 56-60Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2004.11.033
Keywords
low energy electron diffraction (LEED); bismuth; silicon; epitaxial growth; structural transition
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The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film. (C) 2004 Elsevier B.V. All rights reserved.
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