4.7 Article

CuInSe2 Formation by selenization of sequentially evaporated metallic layers

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 86, Issue 1, Pages 1-10

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2004.05.019

Keywords

CuInSe2; Cu-In alloys; sequential evaporations

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CuInSe2 (CIS) thin films were grown by selenization of sequentially evaporated metallic precursors. Different types of sequential processes of evaporation have been tested: Cu/In/Cu/In, In/Cu/In/Cu and In/Cu/In. The selenization procedure was carried out within a partially closed graphite container. The CIS films showed single-phase chalcopyrite structure with preferential orientation in the (112) direction after 500degreesC selenization. The CIS surface morphology depended on the sequence used. The In/Cu/In seemed to be the best. An energy band gap above 0.95 eV and an absorption coefficient near 10(5) cm(-1) were obtained and similar optical properties were observed for all the prepared sequences. (C) 2004 Elsevier B.V. All rights reserved.

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