Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 96, Issue 4, Pages 1027-1033Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-009-5138-x
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Funding
- National Institute of Education/Nanyang Technological University, Singapore [RI 17/03/RSR]
- NIE/NTU
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The effects of the different number (1, 2 and 3) of H+ ion irradiation shots on pulsed laser deposited FePt thin films, using pulsed plasma focus device, are investigated. The FePt thin films were exposed to energetic H+ ions in a plasma focus device at a fixed distance of 4 cm from the top of central electrode. It was deduced that single shot ion irradiation based transient thermal treatment induces an effect similar to the conventional annealing at 400A degrees C. Well-separated nanoparticles are formed, and the significant enhancement of the coercivity, by about two orders of magnitude, at a lower annealing temperature of 400A degrees C has been observed in the single shot ion irradiated samples. The increase of plasma focus ion irradiation shots lead to the amorphorization in irradiated FePt samples due to excessive energy transfer causing more defects and lattice distortion, and a decreasing coercivity trend in irradiated and annealed samples are observed due to reduction in the texture coefficient of magnetic easy axis (001) orientation fct phase.
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