Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 96, Issue 4, Pages 979-984Publisher
SPRINGER
DOI: 10.1007/s00339-009-5128-z
Keywords
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Funding
- National Natural Science Foundation of China [60506001, 60476021, 60576003]
- Higher education commission (HEC) of Pakistan
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Mn ions have been incorporated into MOCVD grown Al(1-x) In (x) N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at similar to 260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T (c) above room temperature is assumed to be associated to the layer having higher Mn concentration.
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