Effects of epitaxial lift-off on interface recombination and laser cooling in GaInP/GaAs heterostructures

Photoluminescence of GaAs passivated with GaInP is studied over the temperature range 7 - 450 K. Different photocarrier recombination mechanisms are identified as the temperature changes. An interface recombination velocity of less than 0.6 cm/s is measured at 300 K. Lift-off processing inhibits but does not preclude laser cooling of GaAs. (c) 2005 American Institute of Physics.