Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1873043
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We report high-Q sol-gel microresonators on silicon chips, fabricated directly from a sol-gel layer deposited onto a silicon substrate. Quality factors as high as 2.5 X 10(7) at 1561 nm were obtained in toroidal microcavities formed of silica sol-gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er3+-doped microlasers were fabricated from Er3+-doped sol-gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol-gel material. Continuous lasing with a threshold of 660 dW for erbium-doped microlaser was also obtained. (C) 2005 American Institute of Physics.
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