Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1874303
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In this study, we rely on low-angle annular dark-field scanning transmission electron microscopy to probe the interface strain profile in epitaxial PbTiO3/SrTiO3 thin-films. All samples displayed a compressively strained layer at the PbTiO3/SrTiO3 interface, with the strain vector parallel to the polarization direction. The width of the strained layer was found to be similar to 15-30 angstrom, dependent on the electrode environment. Our findings open a perspective to use interface strain engineering in combination with control of electrostatic boundary conditions as a tool to monitor the effective interface polarization. These findings have implications for future use of ferroelectrics in electronic and mechanical devices. (C) 2005 American Institute of Physics.
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