Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2 -: art. no. 091909

Previous Hall and photoluminescence investigations on CuGaSe2 yielded conflicting results: defect depths determined by luminescence are lower than the ionization energy found in electrical measurements. In this contribution, we present time and spatially resolved cathodoluminescence measurements that necessitate a new interpretation of the luminescence data, leading to a consistent model for luminescence and Hall data with three acceptors with ionization energies of 60, 100, and 150 meV. Luminescence decay times are long, in the range of 100 ns, indicating strong capture. Luminescence is spatially inhomogeneous, indicating inhomogeneous distribution of defects. (C) 2005 American Institute of Physics.