Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 93, Issue 2, Pages 409-414Publisher
SPRINGER
DOI: 10.1007/s00339-008-4782-x
Keywords
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Funding
- National Research Program
- Korea Ministry of Commerce
- Industry and Energy
- Korea Science and Engineering Foundation (KOSEF)
- Brain Korea 21 (BK21) Project
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Memory devices based on the reversible resistance switching of various materials are attractive for today's semiconductor technology. The reproducible current hysteresis (resistance switching) characteristics of reduced TiO2 single crystal are demonstrated. Basic models concerning the filamentary and Schottky barrier models are discussed. Good retention characteristics are exhibited by the accurate controlling of the annealing parameters.
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