Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500 degrees C in air and N-2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from -1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8-40 depending on the microstructure. The I-V curve indicates that the films possess of a promising low leakage current density of 4.2x10(-8) A/cm(2) at the applied voltage of -1.5 V.