Phase change behaviors of In-Ge-Sb-Te alloy

Phase change behaviors of In2Ge8Sb85Te5 material were studied. Thermal analysis shows the phase change occurs around 160 degrees C and melting at 572 degrees C. Isothermal reflectivity-time measurement of In2Ge8Sb85Te5 shows a growth-dominated crystallization mechanism. A high crystallization speed of 30 ns is realized upon irradiation by blue laser beam of 405 nm. It has face-centered-cubic NaCl-type and rhombohedral Sb crystal structures. The weaker binding energy of In and In-Sb bond energy are believed to be the reasons for fast crystallization speed of In2Ge8Sb85Te5.