Benchmarking nanotechnology for high-performance and low-power logic transistor applications

Recently there has been tremendous progress made in the research of novel nanotechnology for future nanoelectronic applications. In particular, several emerging nanoelectronic devices such as carbon-nanotube field-effect transistors (FETs), Si nanowire FETs, and planar III-V compound semiconductor (e.g., InSb, InAs) FETs, all hold promise as potential device candidates to be integrated onto the silicon platform for enhancing circuit functionality and also for extending Moore's Law. For high-performance and low-power logic transistor applications, it is important that these research devices are frequently benchmarked against the existing Si logic transistor data in order to gauge the progress of research. In this paper, we use four key device metrics to compare these emerging nanoelectronic devices to the state-of-the-art planar and nonplanar Si logic transistors. These four metrics include: 1) CV/I or intrinsic gate delay versus physical gate length L-g; 2) energy-delay product versus L-g; 3) subthreshold slope versus L-g; and 4) CV/I versus on-to-off-state current ratio I-ON/I-OFF. The results of this benchmarking exercise indicate that while these novel nanoelectronic devices show promise and opportunities for future logic applications, there still remain shortcomings in the device characteristics and electrostatics that need to be overcome. We believe that benchmarking is a key element in accelerating the progress of nanotechnology research for logic transistor applications.