High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors

The influence of strong magnetic field on the 1/f noise in AlGaN/GaN metal-oxide-Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/f noise on the magnetic fields up to 10 T where the strong geometric magneto-resistance has been observed, shows that the carrier number fluctuations is the dominant mechanism of the noise in these devices. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.