Direct observation of a neutral Mn acceptor in Ga1-xMnxAs by resonant x-ray emission spectroscopy -: art. no. 121202

We have investigated the Mn acceptor state of III-V-based diluted magnetic semiconductor Gal(1-x)Mn(x)As by means of high-resolution resonant x-ray emission spectroscopy, across the Mn L-3 edge. We identify the coexistence of signals related to the neutral impurity A(0) and the ionized acceptor state A(-) in Ga1-xMnxAs. This fact suggests that double-exchange-like interaction exists in the ferromagnetic coupling in addition to the free-carrier-induced interaction.