Journal
JOURNAL OF ELECTROCERAMICS
Volume 14, Issue 2, Pages 123-132Publisher
SPRINGER
DOI: 10.1007/s10832-005-0874-6
Keywords
defects; doping; acceptor dopants; donor dopants; place exchange; equilibrium conductivity; seebeck; conductivity jump; SBT; SBN
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The equilibrium electrical conductivities of undoped SrBi2Ta2O9 (SBT) and SrBi2Nb2O9 (SBN) have been shown to behave quite differently. SBT has the behavior expected for a 1% acceptor-doped oxide, while SBN behaves like a 1% donor-doped oxide. This difference has been related to the substantial cation place exchange that occurs between the Bi+3 and Sr+2 ions in the alternating layers of the structure. It was proposed that this place exchange is not entirely self-compensating, as would be expected for a simple, isotropic oxide, but that there is some local compensation within each layer by lattice and/or electronic defects. It is now shown that the equilibrium conductivity of 3% donor-doped SBT is similar to that of undoped SBN, while the equilibrium conductivity of 3% acceptor-doped SBN resembles that of undoped SBT. Thus the defect chemistrys of the two compounds are quite similar, but the equilibrium conductivities are displaced along a doping axis.
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