Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 11, Issue 2, Pages 395-407Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2005.845621
Keywords
heterogeneous integration; indium phosphide; membrane; micro-lasers; micro-nano-photonics; microoptoelectromechanical systems (MOEMS); photonic crystals (PCs)
Ask authors/readers for more resources
The general objective of this presentation is to demonstrate the great potential of III-V semiconductor -membrane photonic devices, with a special emphasis on InP and related materials in the prospect of new developments in the field of micro-nano-photonics. Various classes devices will be presented, which will have the communality of being based on the use of high index contrast structuration of semiconductor materials. The structuration is achieved vertically for the first class, by forming thin semiconductor membranes surrounded by low optical index material, or laterally for the second class via a two-dimensional (2-D) lateral structuration of the membranes (thus, resulting in 2-D photonic crystal (PC) structures); both structurations are also combined, according to a 2.5-dimensional approach, which should broaden considerably the combinations of functionality beyond those presently contemplated with the two first classes. The general technological scheme of the membrane approach is fully compatible with planar technology which is widely in use in the world of silicon microelectronics and with heterogeneous integration of III-V active microphotonic devices with silicon microphotonics and microelectronics (e.g., molecular bonding of InP active membranes on silica on silicon substrate). A variety of devices will be presented, featuring micro-lasers based on 2-D PC micro-cavities as well as on 2-D Bloch modes (2-D distributed-feed-back micro-laser) for in plane and surface emission.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available