Bi2O3 rods deposited under atmospheric pressure by means of halide CVD on c-sapphire

Bismuth Oxide (Bi2O3) rods are successfully prepared on delta-Bi2O3 films under atmospheric pressure by means of halide chemical vapour deposition using BiI3 and O-2 as a starting material. The deposition of Bi2O3 rods strongly depends on the deposition temperature, the input partial pressure of BiI3 and O-2 and the method for supplying O-2 gas. Bi2O3 rods can be obtained at [O-2]/[Bil(3)] ratios of 500 and N-2:O-2 = 50:250. The length of the Bi2O3 rods increases proportionally from 2 to 30 mu m, while their diameters of between 0.2 and 0.5 mu m do not depend on the deposition time. (c) 2005 Elsevier Ltd. All rights reserved.