Optical mapping of aluminum doped p-type SiC wafers

We discuss the application of optical techniques to address the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers; optical techniques are superior over their electrical counterparts in a sense that they are non-destructive. While absorption and birefringence mapping are powerful tools to determine the homogeneity of charge carrier concentration and defects in n-type SiC, respectively, the same methods fail in highly p-type doped SiC due to the opaque nature of the latter. Therefore reflective methods like Raman spectroscopy and low temperature photoluminescence have to be applied in order to address electronic properties by optical techniques. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.