Journal
ADVANCED MATERIALS
Volume 17, Issue 5, Pages 549-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200400908
Keywords
-
Ask authors/readers for more resources
Vertical germanium nanowires (Figure, inset) can be synthesized on doped and undoped germanium substrates either as high-density arrays or as individual nanowires. The nanowires have smooth surfaces and uniform diameters, and possess (111) lattice fringes with an interplanar distance of 3.26 angstrom (Figure). Such vertical nanostructures are ideal for fabrication of vertical nano-transistors, such as surround-gate or top-gate transistors, and could be incorporated into other three-dimensional architectures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available