Highly rectifying Pr0.7Ca0.3MnO3/SrTi0.9998Nb0.0002O3 p-n junction -: art. no. 112508

We have fabricated epitaxial Pr0.7Ca0.3MnO3/SrTi0.9998Nb0.0002O3 (PCMO/Nb:STO) junctions and characterized the interface electronic properties. The PCMO/Nb:STO junctions show highly rectifying current density-voltage (J-V) characteristics without an apparent breakdown in the reverse bias up to 100 V at room temperature. The J-V characteristics of the diodes agree well with the conventional diffusion theory for a p-n diode. The forward bias J-V and reverse bias capacitance-voltage characteristics result in an identical built-in potential of similar to 0.7 eV. Based on the experimental results, a plausible band diagram of the PCMO/Nb:STO p-n diode is proposed. (C) 2005 American Institute of Physics.