Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1884747
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The behavior of nitrogen in ZnO thin films grown by high-vacuum plasma-assisted chemical vapor deposition is examined. Highly oriented (002) films doped with 0-2 at. % N were characterized by x-ray photoelectron spectroscopy, x-ray diffraction (XRD), Seebeck, and Hall measurements. XRD measurements revealed that the zinc oxide lattice constant decreased systematically with nitrogen doping. The as-deposited films were p-type at high doping levels, as confirmed by both Seebeck and Hall measurements. However, it was observed that hole conduction decreased and films reverted to n-type conductivity in a period of several days. This change was accompanied by a simultaneous increase in the lattice constant. The transient electrical behavior may be explained by compensation caused either by hydrogen donors or through defect formation processes common to analogous II-VI semiconductors. (C) 2005 American Institute of Physics.
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