Electrodeposition of bismuth thin films on n-GaAs (110) -: art. no. 121916

Bismuth thin films are formed electrochemically on n-GaAs (110). Bismuth films up to a few hundred nanometers in thickness exhibit a strong (018) texture, while thicker films are polycrystalline. The barrier height of the n-GaAs/Bi Schottky contacts is 0.62 eV, about 0.2 eV lower than for electrodeposited bismuth films on GaAs (100). (C) 2005 American Institute of Physics.