Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1894611
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Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple approaches for fabricating collections of these elements, which we refer to as microstructured silicon (mu s-Si), and for using spin-on dopants to introduce doped regions in them. Electrical and mechanical measurements of TFTs formed on plastic substrates with this doped mu s-Si indicate excellent performance. These and other characteristics make the material potentially useful for emerging large area, flexible 'macroelectronic' devices. (C) 2005 American Institute of Physics.
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