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APPLIED PHYSICS LETTERS
Volume 86, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1890469
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We report on electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin-relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid-state semiconductor devices. (C) 2005 American Institute of Physics.
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