Journal
ELECTRONICS LETTERS
Volume 41, Issue 7, Pages 444-446Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20057199
Keywords
-
Categories
Ask authors/readers for more resources
Organic field-effect transistors incorporating the electron transport material C-60 as the active semiconductor have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm(2)/Vs, comparable to the state-of-the-art value measured under ultra-high-vacuum conditions.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available