Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 20, Issue 4, Pages S103-S111Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/20/4/012
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Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of research on various magnetic oxide semiconductors. The magnetization, magneto-optical effect and magneto-transport such as the anomalous Hall effect are examined from the viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.
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