Dielectric properties of A- and B-site doped BaTiO3(II):: La- and Ga-doped solid solutions -: art. no. 074106

Extremely small amounts of codoping La and Ga on the A and B sites of BaTiO3, respectively, resulting in a solid solution of the type Ba1-3xLa2xGa4xTi1-3xO3, have been investigated. The compounds have been prepared by conventional solid-state reaction. The x-ray diffraction (XRD) shows the presence of the tetragonal (P4/mmm) phase only. The XRD data have been analyzed using the FULLPROF Rietveld refinement package. The compositions have been characterized by dielectric spectroscopy between room temperature and 200 degrees C. The resulting compounds (0 <= x <= 0.008) exhibit a remarkable decrease in Curie temperature as well as a significant enhancement in the dielectric constant. (C) 2005 American Institute of Physics.