Journal
ACTA MATERIALIA
Volume 53, Issue 6, Pages 1759-1770Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2004.12.025
Keywords
nanoindentation; phase transformations; silicon; Raman spectroscopy
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Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (10 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3 degrees to 85.0 degrees. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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