Journal
JOURNAL OF APPLIED PHYSICS
Volume 97, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1868876
Keywords
-
Categories
Ask authors/readers for more resources
We report on experimental and theoretical investigation of thermal conduction in AlxGa1-xN alloys. A focus of this study is on understanding the effect of the Al mass fraction x and temperature on thermal conductivity in AlxGa1-xN thin films. The thermal conductivity of a set of AlxGa1-xN thin films as well as a pure GaN sample was measured using the differential 3 omega technique in the temperature range from 80 to 400 K. Application of the virtual-crystal model allowed us to elucidate the strength of the mass-difference and strain-field-difference phonon scattering in AlxGa1-xN alloy system. The obtained thermal-conductivity temperature dependence indicates the high degree of disorder in the system. The measured variation of the thermal conductivity with the Al fraction x is in good agreement with the theory predictions. The measured data and calculation procedure are useful for evaluating the self-heating effect in AlxGa1-xN/GaN heterostructure field-effect transistors and for the device structure optimization. (C) 2005 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available