Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 44, Issue 4A, Pages 1626-1628Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.1626
Keywords
carbon nanotube; chemical vapor deposition; via; interconnect; resistance
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We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450 degrees C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Omega/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 x 10(6) A/cm(2), which is favorably compared with Cu vias.
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