Growth of Si nanowires by thermal evaporation

Si nanowires have been produced in high yield on S1 substrate with the absence of a catalyst by thermal evaporation at high temperature. The self-induced growth of Si nanowires suggests that a catalyst should be not essential. Transmission electron microscopic investigation shows that the nanowires, with a diameter ranging from 10 to 100 nm and length up to a few hundred microns, are crystalline or amorphous. The self-induced solid-liquid-solid model and oxygen-assisted vapour-solid mode are employed to explain the results. Raman spectroscopy shows an asymmetric peak around 512 cm(-1), with a deviation of 9 cm(-1) from that of the bulk crystalline Si. XRD and TEM were used to characterize the Si nanowires. The effects of growth conditions on quality and production were investigated.