Journal
IEEE ELECTRON DEVICE LETTERS
Volume 26, Issue 4, Pages 255-257Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.845495
Keywords
high voltage; power transistors; silicon carbide; wide bandgap
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We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115-mu m-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm(2) and specific on-resistance of 228 m Omega (.) cm 2 are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.
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