High-frequency micro-machined power inductors

Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 n.H. The DC saturation currents of the non-gapped and gapped inductors are similar to 500 and 700mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters. (c) 2004 Elsevier B.V. All rights reserved.