Journal
NANO LETTERS
Volume 5, Issue 4, Pages 745-748Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl050228q
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Large number density Pt nanowires with typical dimensions of 12 mu m x 20 nm x 5 nm (length x width x height) are fabricated on planar oxide supports. First sub-20 nm single crystalline silicon nanowires are fabricated by size reduction lithography, and then the Si nanowire pattern is replicated to produce a large number of lot nanowires by nanoimprint lithography. The width and height of the lot nanowires are uniform and are controlled with nanometer precision. The nanowire number density is 4 x 10(4) cm(-1), resulting in a Pt surface area larger than 2 cm(2) on a 5 x 5 cm(2) oxide substrate. Bimodal nanowires with different width have been generated by using a lot shadow deposition technique. Using this technique, alternating 10 and 19 nm wide nanowires are produced.
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