Chemical manipulation of High-TC ferromagnetism in ZnO diluted magnetic semiconductors -: art. no. 147209

We report the use of targeted p- and n-type chemical perturbations to manipulate high-T-C ferromagnetism in Mn2+ZnO and Co2+ZnO in predictable and reproducible ways. We demonstrate a clear correlation between nitrogen and high-T-C ferromagnetism for Mn2+ZnO and an inverse correlation for Co2+ZnO, both as predicted by recent theoretical models. These chemical perturbations reveal rich possibilities for exerting external control over high-T-C spin ordering in diluted magnetic semiconductors.