4.7 Article

Analysis of porous oxide film growth on aluminum in phosphoric acid using re-anodizing technique

Journal

APPLIED SURFACE SCIENCE
Volume 242, Issue 3-4, Pages 333-338

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2004.08.034

Keywords

aluminum; porous alumina; electrical double layer; injecting junction; surface charge; re-anodizing

Ask authors/readers for more resources

The effects of the anodizing voltage on the porous alumina film formation on Al foil in 4% phosphoric acid at 20 degrees C have been studied. The barrier layer thickness of porous films was determined by a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. It was established that the change in the porous film growth mechanism occurred at 38 V in phosphoric acid. We explained this phenomenon by the surface charge of anodic oxide film and its dependence on the anodizing voltage in the electrolyte. It was shown that the surface charge of oxide film during anodizing in phosphoric acid to 38 V was negative. The charge was equal to zero at 38 V. Above 38 V, the surface of oxide film had a positive charge and this charge increased with the anodizing voltage. (c) 2004 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available