Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1906313
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Comparing the imaginary part of the dielectric function of wurtzite GaN measured by spectroscopic ellipsometry at room temperature with calculations, we found the values of E-p =(19.8 ± 0.5) eV, m(0)*=(0.201 ± 0.005)m(0), and F=-0.89 ± 0.05 for the momentum matrix element, electron effective mass at the conduction band edge, and parameter F describing the influence of remote bands, respectively. We also observed a remarkable nonparabolicity of the conduction band. The data obtained are consistent with A sets of valence band parameters reported earlier providing a parameterization of band structure of wurtzite GaN in the vicinity of the Γ point. © 2005 American Institute of Physics.
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