Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1900304
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Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.© 2005 American Institute of Physics.
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