Journal
ADVANCED MATERIALS
Volume 17, Issue 8, Pages 1010-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200400648
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High-quality inverse-opal photonic crystals (see Figure) are formed by TiO2 infiltration and subsequent removal of SiO2 opal templates. Low-temperature atomic layer deposition followed by annealing yields highly conformal infiltrations with extremely smooth surfaces (less than 1 nm root-mean-square roughness) and filling fractions of similar to 88%. Photonic-bandgap properties were determined using UV-vis reflectivity and transmission measurements.
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