Journal
APPLIED OPTICS
Volume 44, Issue 12, Pages 2377-2381Publisher
OPTICAL SOC AMER
DOI: 10.1364/AO.44.002377
Keywords
-
Categories
Ask authors/readers for more resources
A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55- mu m wavelength was produced and evaluated. (c) 2005 Optical Society of America.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available