Journal
ELECTRONICS LETTERS
Volume 41, Issue 9, Pages 561-562Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20050807
Keywords
-
Categories
Ask authors/readers for more resources
The bonding of InP/InGaAsP heterostructures dies onto an SOI substrate is reported. Bonding layer thicknesses down to 200 nm were reproducibly achieved. Bonding was achieved both on unprocessed SOI substrates as on processed SOI substrates containing high index contrast waveguides.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available