Journal
PHYSICAL REVIEW B
Volume 71, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.71.205328
Keywords
-
Ask authors/readers for more resources
We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available