MBE-grown high κ gate dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V semiconductors nano-electronics

The MBE growth technique is employed to the intensively studied high K gate dielectrics HFO2 (kappa = 20) and its alloy (Hf - Al)O-2 in replacing conventional SiO2 for nano-CMOS applications. Typical 4.9 nm thick HfO2 films showed low leakage current density of similar to 0.4A/cm(2) at 1 V, a dielectric constant kappa of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 degrees C. (c) 2005 Elsevier B.V. All rights reserved.