Journal
IEEE ELECTRON DEVICE LETTERS
Volume 26, Issue 5, Pages 326-328Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.846587
Keywords
body-tied; double-gate; FinFET; floating body; negative-bias temperature instability (NBTI); reliability; SOI
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Negative-bias temperature-instability (NBTI) characteristics are carefully studied on SOI and body-tied pMOS FinFETs for the first time. It was observed that a narrow fin width degraded device lifetime more than a wider fin width. Electrons generated by the NBT stress are accumulated at the center of a silicon fin and cause energy-band bending. This results in an incremental hole population at the interface. The energy band is bent more steeply at the narrow fin than at the wide fin by the accumulated electrons. A body-tied FinFET shows better immunity to NBT stress due to a substrate contact.
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