Journal
JOURNAL OF CRYSTAL GROWTH
Volume 278, Issue 1-4, Pages 624-628Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2004.12.128
Keywords
interfaces; molecular beam epitaxy; gadolinium compounds; nitrides; dielectric materials; semiconducting gallium compounds
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The depth profile of high-resolution photoelectron spectra at Ga2O3(Gd2O3)-GaN and Gd2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar+ sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (Δ Ev) of ∼ 1.1 and 1.0eV were also measured for the Ga2O3(Gd2O3)-GaN and Gd2O3-GaN interfaces, respectively. © 2005 Elsevier B.V. All rights reserved.
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