Journal
APPLIED MAGNETIC RESONANCE
Volume 39, Issue 1-2, Pages 137-150Publisher
SPRINGER WIEN
DOI: 10.1007/s00723-010-0142-z
Keywords
-
Ask authors/readers for more resources
In the last years an increasing technological interest in the wide band gap semiconductor ZnO has widely stimulated research on this material. The electrical and optical properties of ZnO are strongly affected by the presence of defects and dopant. For instance, to obtain p-type conductivity it requires not only to find a suitable doping element but also to suppress counteracting intrinsic defects. Magnetic resonance experiments can contribute considerable knowledge to this subject. We review the current knowledge on impurities, intrinsic defects and doping elements in ZnO as obtained by magnetic resonance experiments in this paper.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available